IXFN80N50Q3 | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 500 V, 63 A, SOT-227, IXFN80N50Q3
Unit Price (€ / pc.)
51.6817 € *
Available: 0 pcs.
Leadtime: 59 Weeks **
MOSFET, IXFN80N50Q3, LITTELFUSE
A power MOSFET with N-Channel enhancement mode, and with advantages such as high power density, easy mounting, and space saving.
Features
- International standard package
- Low intrinsic gate resistance
- miniBLOC with aluminum nitride isolation
- Low package inductance
- Fast intrinsic rectifier
- Low RDS(on) and QG
Applications
- DC-DC converters
- Battery chargers
- Switch-mode and resonant-mode power supplies
- DC choppers
- Temperature and lighting controls
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 65 mΩ | |
Gate Charge Qg @10V (nC) | 2x10<sup>-7</sup> C | |
Enclosure | SOT-227 | |
max. Voltage | 500 V | |
Max. current | 63 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | screw mounting | |
Power loss | 780 W |
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Logistics
Country of origin | KR |
Customs tariff number | 85411000 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |