IXFN80N60P3 | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 600 V, 66 A, SOT-227, IXFN80N60P3
Unit Price (€ / pc.)
35.0217 € *
Available: 0 pcs.
Leadtime: 43 Weeks **
MOSFET, IXFN80N60P3, LITTELFUSE
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as easy mounting, and space saving.
Features
- International standard package
- Low intrinsic gate resistance
- miniBLOC with aluminum nitride isolation
- Dynamic dv/dt rating
- Fast intrinsic rectifier
- Low QG
- Low RDS(on)
- Low drain-to-tab capacitance
- Low package inductance
Applications
- DC-DC converters
- Battery chargers
- Switch-mode and resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- AC motor drives
- High speed power switching applications
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 77 mΩ | |
| Gate Charge Qg @10V (nC) | 1.9x10<sup>-7</sup> C | |
| Enclosure | SOT-227 | |
| max. Voltage | 600 V | |
| Max. current | 66 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | screw mounting | |
| Power loss | 960 W |
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Logistics
| Country of origin | KR |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
