IXFN82N60Q3 | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 600 V, 66 A, SOT-227, IXFN82N60Q3
Unit Price (€ / pc.)
61.9514 € *
Available: 0 pcs.
Leadtime: 98 Weeks **
MOSFET, IXFN82N60Q3, LITTELFUSE
A power MOSFET with N-Channel enhancement mode, and with advantages such as high power density, easy mounting, and space saving.
Features
- International standard package
- Low intrinsic gate resistance
- miniBLOC with aluminum nitride isolation
- Low package inductance
- Fast intrinsic rectifier
- Low RDS(on) and QG
Applications
- DC-DC converters
- Battery chargers
- Switch-mode and resonant-mode power supplies
- DC choppers
- Temperature and lighting controls
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 75 mΩ | |
| Gate Charge Qg @10V (nC) | 2.75x10<sup>-7</sup> C | |
| Enclosure | SOT-227 | |
| max. Voltage | 600 V | |
| Max. current | 66 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | screw mounting | |
| Power loss | 960 W |
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Logistics
| Country of origin | KR |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
