IXFR15N100Q3 | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 1000 V, 10 A, TO-247I, IXFR15N100Q3
Unit Price (€ / pc.)
19.3851 € *
Available: 0 pcs.
Leadtime: 98 Weeks **
MOSFET, IXFR15N100Q3, LITTELFUSE
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and space saving.
Features
- Silicon chip on direct-copper bond (DCB) substrate
- Isolated mounting surface
- Low intrinsic gate resistance
- Fast intrinsic rectifier
- Low package inductance
Applications
- DC-DC converters
- Battery chargers
- Switch-mode and resonant-mode power supplies
- DC choppers
- Temperature and lighting controls
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 1.2 Ω | |
| Gate Charge Qg @10V (nC) | 6.4x10<sup>-8</sup> C | |
| Enclosure | TO-247I | |
| max. Voltage | 1000 V | |
| Max. current | 10 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 400 W |
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Logistics
| Country of origin | PH |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
