MMIX4B20N300 | Littelfuse
Littelfuse High Gain BIMOSFET Monolithic Bipolar MOS Transistor, SMPD, MMIX4B20N300
Order No.: 74P1145
EAN: 4099891780104
MPN:
MMIX4B20N300
Unit Price (€ / pc.)
144.228 € *
Available: 0 pcs.
Leadtime: 47 Weeks **
IGBT, MMIX4B20N300, LITTELFUSE
A high voltage IGBT transistor with high peak current capability, low saturation voltage, and advantages such as high power density and low gate drive requirements.
Features
- Silicon chip on direct-copper-bond substrate
- Isolated mounting surface
- High blocking voltage
Applications
- Switch-mode and resonant-mode power supplies
- Capacitor discharge circuits
Technical specifications
| Enclosure | SMPD | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD |
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Logistics
| Country of origin | PH |
| Customs tariff number | 85411000 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
