DSEI2X30-10B | Littelfuse
Fast recovery epitaxial diode, 1000 V (RRM), 30 A, SOT-227B, DSEI2X30-10B
Order No.: 74P1391
EAN: 4099891782566
MPN:
DSEI2X30-10B
Unit Price (€ / pc.)
23.324 € *
Available: 0 pcs.
Leadtime: 28 Weeks **
Recovery diode, DSEI2X30-10B, Littelfuse
Fast recovery epitaxial diode with an isolation voltage of 3000 V, soft reverse recovery for low EMI/RFI, low leakage current, avalanche voltage rating for reliable operation, and copper base plate with internal DCB isolation.
Features
- Planar passivated chip
- Very short recovery time
- Improved thermal behavior
- Very low Irm value
- Very soft recovery behaviour
- Low Irm reduces power dissipation within the diode
- Low Irm reduces turn-on loss in the commutating switch
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94 V-0
- Advanced power cycling
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Technical specifications
| Ausführung | Fast Recovery Epitaxial Diode | |
| Durchlassstrom | 30 A | |
| Gehäuse | SOT-227B | |
| Kapazität | 16 pF | |
| max. Temperatur | 125 °C | |
| min. Temperatur | -40 °C | |
| Montage | SMD | |
| Spannung V RRM (Spitzensperrspannung) | 1000 V | |
| Sperrschichttemperatur (max.) | 150 °C | |
| Sperrschichttemperatur (min.) | -40 °C |
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Logistics
| Ursprungsland | KR |
| Zolltarifnummer | 85411000 |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
