DSEI2X31-12B | Littelfuse
Fast recovery epitaxial diode, 1200 V (RRM), 30 A, SOT-227B, DSEI2X31-12B
Order No.: 74P1396
EAN: 4099891782610
MPN:
DSEI2X31-12B
Unit Price (€ / pc.)
22.3363 € *
Available: 0 pcs.
Leadtime: 28 Weeks **
Recovery diode, DSEI2X31-12B, Littelfuse
Fast recovery epitaxial diode with an isolation voltage of 3000 V, soft reverse recovery for low EMI/RFI, low leakage current, avalanche voltage rating for reliable operation, and copper base plate with internal DCB isolation.
Features
- Planar passivated chip
- Very short recovery time
- Improved thermal behavior
- Very low Irm value
- Very soft recovery behaviour
- Low Irm reduces power dissipation within the diode
- Low Irm reduces turn-on loss in the commutating switch
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94 V-0
- Advanced power cycling
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Technical specifications
Version | fast recovery epitaxial diode | |
Forward Current | 30 A | |
Enclosure | SOT-227B | |
Capacity | 14 pF | |
max. operating temperature | 125 °C | |
min. operating temperature | -40 °C | |
Assembly | SMD | |
Voltage V RRM (peak reverse voltage) | 1200 V | |
Junction temperature (max.) | 150 °C | |
Junction temperature (min.) | -40 °C |
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Logistics
Country of origin | KR |
Customs tariff number | 85411000 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |