BCP55,135 | NEXPERIA
Bipolar junction transistor, NPN, 1 A, 60 V, SMD, TO-261, BCP55,135
Unit Price (€ / pc.)
0.1202 € *
Available: 0 pcs.
Leadtime: On Request **
NPN power transistor, BCP55,135, NEXPERIA
NPN medium power transistor series in a small SOT223 (SC-73) surface-mounted device (SMD) plastic package.
Features
- High current
- High power dissipation capability
- Three current gain selections
Applications
- Power management
- Battery-driven devices
- Amplifiers
- Low-side switches
- Linear voltage regulators
Technical specifications
| Version | NPN | |
| Enclosure | TO-261 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 60 V | |
| max.voltage between collector and emitter Vceo | 60 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Rated current | 1 A | |
| Saturation voltage | 500 mV | |
| Transit frequency fTmin | 100 MHz | |
| Power dissipation | 0.65 W | |
| Collector current | 1 A | |
| Max DC amplification | 250 mA | |
| Min DC gain | 63 mA |
Download
Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
