BCP55-16,115 | NEXPERIA
Bipolar junction transistor, NPN, 1 A, 60 V, SMD, TO-261, BCP55-16,115
Unit Price (€ / pc.)
0.0119 € *
Available: 0 pcs.
Leadtime: On Request **
NPN power transistor, BCP55-16,115, NEXPERIA
NPN medium power transistor series in a small SOT223 (SC-73) surface-mounted device (SMD) plastic package.
Features
- High current
- High power dissipation capability
- Three current gain selections
Applications
- Power management
- Battery-driven devices
- Amplifiers
- Low-side switches
- Linear voltage regulators
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TO-261 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 60 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 60 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Nennstrom | 1 A | |
| Sättigungsspannung | 500 mV | |
| Transitfrequenz fTmin | 180 MHz | |
| Verlustleistung VA (AC) | 0.65 W | |
| Kollektorstrom | 1 A | |
| Max Gleichstromverstärkung | 250 mA | |
| Min Gleichstromverstärkung | 100 mA |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 1.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
