BST61,115 | NEXPERIA
Bipolar junction transistor, PNP, -1 A, -60 V, SMD, SOT-89, BST61,115
Unit Price (€ / pc.)
0.3927 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, BST61,115, NEXPERIA
PNP Darlington transistor in a SOT89 (SC-62) flat lead surface-mounted device (SMD) plastic package.
Features
- Integrated diode and resistor
- AEC-Q101 qualified
Applications
- Print hammer
- Solenoid
- Relay and lamp driving
Technical specifications
| Ausführung | PNP | |
| Gehäuse | SOT-89 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | -80 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | -60 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | -1.3 V | |
| Transitfrequenz fTmin | 200 MHz | |
| Verlustleistung VA (AC) | 1.3 W | |
| Kollektorstrom | -1 A |
Download
Logistics
| Ursprungsland | HK |
| Zolltarifnummer | 85419000 |
Compliance
| RoHS konform | No |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
