PBSS301PD,115 | NEXPERIA
Bipolar junction transistor, PNP, -4 A, -20 V, SMD, SOT-457, PBSS301PD,115
Unit Price (€ / pc.)
0.357 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, PBSS301PD,115, NEXPERIA
PNP low VCEsat breakthrough in small signal (BISS) transistor in a SOT457 (SC-74) surface-mounted device (SMD) plastic package.
Features
- Very low collector-emitter saturation resistance
- Ultra low collector-emitter saturation voltage
- High efficiency due to less heat generation
Applications
- Power management functions
- Charging circuits
- Power switches
- Thin Film Transistor (TFT) backlight inverter
Technical specifications
| Ausführung | PNP | |
| Gehäuse | SOT-457 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | -20 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | -20 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | -280 mV | |
| Transitfrequenz fTmin | 80 MHz | |
| Verlustleistung VA (AC) | 0.36 W | |
| Kollektorstrom | -4 A | |
| Min Gleichstromverstärkung | 250 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
