PBSS305ND,115 | NEXPERIA
Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-457, PBSS305ND,115
Unit Price (€ / pc.)
0.2725 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS305ND,115, NEXPERIA
NPN low VCEsat breakthrough in small signal (BISS) transistor in a SOT457 (SC-74) small surface-mounted device (SMD) plastic package.
Features
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Automotive applications
- Thin Film Transistor (TFT) backlight inverter
- High-voltage power switches
- High-voltage motor control
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-457 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 100 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 100 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | 120 mV | |
| Transitfrequenz fTmin | 140 MHz | |
| Verlustleistung VA (AC) | 0.36 W | |
| Kollektorstrom | 1 A | |
| Min Gleichstromverstärkung | 170 mA |
Download
Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
