PBSS305ND,115 | NEXPERIA
Bipolar junction transistor, NPN, 1 A, 100 V, SMD, SOT-457, PBSS305ND,115
Unit Price (€ / pc.)
0.2725 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS305ND,115, NEXPERIA
NPN low VCEsat breakthrough in small signal (BISS) transistor in a SOT457 (SC-74) small surface-mounted device (SMD) plastic package.
Features
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Automotive applications
- Thin Film Transistor (TFT) backlight inverter
- High-voltage power switches
- High-voltage motor control
Technical specifications
| Version | NPN | |
| Enclosure | SOT-457 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 100 V | |
| max.voltage between collector and emitter Vceo | 100 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | 120 mV | |
| Transit frequency fTmin | 140 MHz | |
| Power dissipation | 0.36 W | |
| Collector current | 1 A | |
| Min DC gain | 170 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Rolle mit 3.000 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |