PBSS306NX,115 | NEXPERIA
Bipolar junction transistor, NPN, 4.5 A, 100 V, SMD, TO-243AA, PBSS306NX,115
Unit Price (€ / pc.)
0.5355 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS306NX,115, NEXPERIA
NPN low VCEsat breakthrough in small signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead surface-mounted device (SMD) plastic package.
Features
- Low collector-emitter saturation
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Automotive applications
- High-voltage power switches
- High-voltage motor control
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TO-243AA | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 100 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 100 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | 245 mV | |
| Transitfrequenz fTmin | 110 MHz | |
| Verlustleistung VA (AC) | 0.6 W | |
| Kollektorstrom | 4.5 A | |
| Min Gleichstromverstärkung | 200 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 1.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
