PBSS306NX,115 | NEXPERIA
Bipolar junction transistor, NPN, 4.5 A, 100 V, SMD, TO-243AA, PBSS306NX,115
Unit Price (€ / pc.)
0.5355 € *
Available: 0 pcs.
Leadtime: 4 Weeks **
NPN transistor, PBSS306NX,115, NEXPERIA
NPN low VCEsat breakthrough in small signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead surface-mounted device (SMD) plastic package.
Features
- Low collector-emitter saturation
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Automotive applications
- High-voltage power switches
- High-voltage motor control
Technical specifications
| Version | NPN | |
| Enclosure | TO-243AA | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 100 V | |
| max.voltage between collector and emitter Vceo | 100 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | 245 mV | |
| Transit frequency fTmin | 110 MHz | |
| Power dissipation | 0.6 W | |
| Collector current | 4.5 A | |
| Min DC gain | 200 mA |
Download
Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
