PBSS306PX,115 | NEXPERIA
Bipolar junction transistor, PNP, -3.7 A, -100 V, SMD, TO-243AA, PBSS306PX,115
Unit Price (€ / pc.)
0.5236 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, PBSS306PX,115, NEXPERIA
PNP low VCEsat breakthrough in small signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead surface-mounted device (SMD) plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Automotive applications
- Thin Film Transistor (TFT) backlight inverter
- High-voltage motor control
- High-voltage power switches
Technical specifications
| Ausführung | PNP | |
| Gehäuse | TO-243AA | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | -100 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | -100 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | -300 mV | |
| Transitfrequenz fTmin | 100 MHz | |
| Verlustleistung VA (AC) | 0.6 W | |
| Kollektorstrom | -3.7 A | |
| Min Gleichstromverstärkung | 200 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 1.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
