PBSS4021NT,215 | NEXPERIA
Bipolar junction transistor, NPN, 4.3 A, 20 V, SMD, SOT-23, PBSS4021NT,215
Unit Price (€ / pc.)
0.3213 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS4021NT,215, NEXPERIA
NPN low VCEsat breakthrough in small signal (BISS) transistor in a SOT23 (TO-236AB) small surface-mounted device (SMD) plastic package.
Features
- Very low collector-emitter saturation voltage
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-23 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 20 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 20 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 165 MHz | |
| Verlustleistung VA (AC) | 0.39 W | |
| Kollektorstrom | 4.3 A | |
| Min Gleichstromverstärkung | 300 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
