PBSS4032NT,215 | NEXPERIA
Bipolar junction transistor, NPN, 2.6 A, 30 V, SMD, SOT-23, PBSS4032NT,215
Unit Price (€ / pc.)
0.2618 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS4032NT,215, NEXPERIA
NPN low VCEsat breakthrough in small signal (BISS) transistor in a SOT23 (TO-236AB) small surface-mounted device (SMD) plastic package.
Features
- Very low collector-emitter saturation voltage
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches
Technical specifications
| Version | NPN | |
| Enclosure | SOT-23 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 30 V | |
| max.voltage between collector and emitter Vceo | 30 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 180 MHz | |
| Power dissipation | 0.39 W | |
| Collector current | 2.6 A | |
| Min DC gain | 300 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
