PBSS4041NX,115 | NEXPERIA
Bipolar junction transistor, NPN, 6.2 A, 60 V, SMD, TO-243AA, PBSS4041NX,115
Unit Price (€ / pc.)
0.4760 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS4041NX,115, NEXPERIA
NPN low VCEsat breakthrough in small signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) surface-mounted device (SMD) plastic package.
Features
- Very low collector-emitter saturation voltage
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches
Technical specifications
Version | NPN | |
Enclosure | TO-243AA | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 60 V | |
max.voltage between collector and emitter Vceo | 60 V | |
min. operating temperature | -65 °C | |
Assembly | SMD | |
Transit frequency fTmin | 130 MHz | |
Power dissipation | 0.6 W | |
Collector current | 6.2 A | |
Min DC gain | 300 mA |
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Logistics
Customs tariff number | 85412900 |
Original Packaging | Reel with 1,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 6/8/11 |
SVHC free | Yes |