PBSS4160DPN,115 | NEXPERIA
Bipolar junction transistor, NPN/PNP, 0.87 A, 60 V, SMD, SOT-457, PBSS4160DPN,115
Unit Price (€ / pc.)
0.2392 € *
Available: 0 pcs.
Leadtime: On Request **
NPN/PNP transistor, PBSS4160DPN,115, NEXPERIA
NPN/PNP low VCEsat breakthrough in small signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability
- High collector current gain
- High efficiency due to less heat generation
Applications
- Automotive applications
- Dual low power switches
- Half and full bridge motor drivers
- Complementary MOSFET driver
Technical specifications
| Ausführung | NPN/PNP | |
| Gehäuse | SOT-457 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 60 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Transitfrequenz fTmin | 220 MHz | |
| Kollektorstrom | 0.87 A | |
| Min Gleichstromverstärkung | 250 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
