PBSS4160T,215 | NEXPERIA
Bipolar junction transistor, NPN, 900 mA, 60 V, SMD, SOT-23, PBSS4160T,215
Unit Price (€ / pc.)
0.0785 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS4160T,215, NEXPERIA
NPN low VCEsat transistor in a SOT23 plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability
- High efficiency, reduces heat generation
- Reduces printed-circuit board area required
Applications
- Telecom infrastructure
- Industrial
- Automotive 42 V power
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-23 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 80 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 60 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Nennstrom | 1 A | |
| Sättigungsspannung | 110 mV | |
| Transitfrequenz fTmin | 220 MHz | |
| Verlustleistung VA (AC) | 0.27 W | |
| Kollektorstrom | 900 mA | |
| Min Gleichstromverstärkung | 250 mA |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
