PBSS4250X,115 | NEXPERIA
Bipolar junction transistor, NPN, 2 A, 50 V, SMD, TO-243AA, PBSS4250X,115
Unit Price (€ / pc.)
0.2332 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS4250X,115, NEXPERIA
NPN low VCEsat transistor in a SOT89 (SC-62) flat lead surface-mounted device (SMD) plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability
- Higher efficiency leading to less heat generation
- Reduced printed-circuit board requirements
- AEC-Q101 qualified
Applications
- Power management
- Peripheral drivers
Technical specifications
Version | NPN | |
Enclosure | TO-243AA | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 50 V | |
max.voltage between collector and emitter Vceo | 50 V | |
min. operating temperature | -65 °C | |
Assembly | SMD | |
Saturation voltage | 320 mV | |
Transit frequency fTmin | 100 MHz | |
Power dissipation | 0.55 W | |
Collector current | 2 A | |
Min DC gain | 300 mA |
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Logistics
Customs tariff number | 85412900 |
Original Packaging | Reel with 1,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 6/8/11 |
SVHC free | Yes |