PBSS4350D,115 | NEXPERIA
Bipolar junction transistor, NPN, 3 A, 50 V, SMD, SOT-457, PBSS4350D,115
Unit Price (€ / pc.)
0.1952 € *
Available: 0 pcs.
Leadtime: On Request **
NPN transistor, PBSS4350D,115, NEXPERIA
NPN low VCEsat transistor in a SOT457 (SC-74) plastic package.
Features
- Low collector-emitter saturation voltage
- High current capability
- Improved device reliability due to reduced heat generation
- AEC-Q101 qualified
Applications
- Supply line switching circuits
- Battery management applications
- Heavy duty battery powered equipment
- DC/DC convertor applications
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-457 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 50 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 50 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | 290 mV | |
| Transitfrequenz fTmin | 100 MHz | |
| Verlustleistung VA (AC) | 0.6 W | |
| Kollektorstrom | 3 A | |
| Min Gleichstromverstärkung | 200 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
