PBSS5540Z,115 | NEXPERIA
Bipolar junction transistor, PNP, -5 A, -40 V, SMD, TO-261, PBSS5540Z,115
Unit Price (€ / pc.)
0.3451 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, PBSS5540Z,115, NEXPERIA
PNP low VCEsat transistor in a SOT223 plastic package.
Features
- Low collector-emitter saturation voltage
- High current capability
- Improved device reliability due to reduced heat generation
Applications
- Supply line switching circuits
- Battery management applications
- Heavy duty battery powered equipment
- DC/DC converter applications
Technical specifications
| Version | PNP | |
| Enclosure | TO-261 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | -40 V | |
| max.voltage between collector and emitter Vceo | -40 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | -375 mV | |
| Transit frequency fTmin | 120 MHz | |
| Power dissipation | 1.35 W | |
| Collector current | -5 A | |
| Min DC gain | 250 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
