PBSS5540Z,115 | NEXPERIA
Bipolar junction transistor, PNP, -5 A, -40 V, SMD, TO-261, PBSS5540Z,115
Unit Price (€ / pc.)
0.3451 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, PBSS5540Z,115, NEXPERIA
PNP low VCEsat transistor in a SOT223 plastic package.
Features
- Low collector-emitter saturation voltage
- High current capability
- Improved device reliability due to reduced heat generation
Applications
- Supply line switching circuits
- Battery management applications
- Heavy duty battery powered equipment
- DC/DC converter applications
Technical specifications
| Ausführung | PNP | |
| Gehäuse | TO-261 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | -40 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | -40 V | |
| min. Temperatur | -65 °C | |
| Montage | SMD | |
| Sättigungsspannung | -375 mV | |
| Transitfrequenz fTmin | 120 MHz | |
| Verlustleistung VA (AC) | 1.35 W | |
| Kollektorstrom | -5 A | |
| Min Gleichstromverstärkung | 250 mA |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 1.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
