PBSS9110Z,135 | NEXPERIA
Bipolar junction transistor, PNP, -1 A, -100 V, SMD, TO-261, PBSS9110Z,135
Unit Price (€ / pc.)
0.1964 € *
Available: 0 pcs.
Leadtime: On Request **
PNP transistor, PBSS9110Z,135, NEXPERIA
PNP low VCEsat breakthrough in small signal (BISS) transistor in a SOT223 (SC-73) small surface-mounted device (SMD) plastic package.
Features
- Low collector-emitter saturation voltage
- High collector current capability
- Higher efficiency leading to less heat generation
- Smaller required Printed-Circuit Board (PCB) area
- AEC-Q101 qualified
Applications
- Automotive applications
- High-voltage motor control
- High-voltage power switches
Technical specifications
| Version | PNP | |
| Enclosure | TO-261 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | -120 V | |
| max.voltage between collector and emitter Vceo | -100 V | |
| min. operating temperature | -65 °C | |
| Assembly | SMD | |
| Saturation voltage | -320 mV | |
| Transit frequency fTmin | 100 MHz | |
| Power dissipation | 0.65 W | |
| Collector current | -1 A | |
| Max DC amplification | 450 mA | |
| Min DC gain | 150 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 4,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
