BC849BLT1G | onsemi
Bipolar junction transistor, NPN, 100 mA, 30 V, SMD, SOT-23, BC849BLT1G
Unit Price (€ / pc.)
0.0155 € *
Available: 0 pcs.
Leadtime: 5 Weeks **
NPN transistor, BC849BLT1G, onsemi
This NPN bipolar transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Applications
- Polarity reversal protection
- Data line protection
- Inductive load protection
- ESD protection
Technical specifications
| Version | NPN | |
| Enclosure | SOT-23 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 30 V | |
| max.voltage between collector and emitter Vceo | 30 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Saturation voltage | 600 mV | |
| Transit frequency fTmin | 100 MHz | |
| Power dissipation | 0.225 W | |
| Collector current | 100 mA |
Download
Logistics
| Country of origin | PH |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
