BC849BLT1G | onsemi
Bipolar junction transistor, NPN, 100 mA, 30 V, SMD, SOT-23, BC849BLT1G
Unit Price (€ / pc.)
0.0155 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
1,856.40 € *
*incl. VAT plus shipping costs
**Subject to prior sale
120000 pcs.
0.0155 €
NPN transistor, BC849BLT1G, onsemi
This NPN bipolar transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Applications
- Polarity reversal protection
- Data line protection
- Inductive load protection
- ESD protection
Technical specifications
| Ausführung | NPN | |
| Gehäuse | SOT-23 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 30 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 30 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Sättigungsspannung | 600 mV | |
| Transitfrequenz fTmin | 100 MHz | |
| Verlustleistung VA (AC) | 0.225 W | |
| Kollektorstrom | 100 mA |
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Logistics
| Ursprungsland | PH |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
