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BD137G | onsemi

Bipolar junction transistor, NPN, 1.5 A, 60 V, THT, TO-225AA, BD137G

Order No.: 15S9921
EAN: 4099879028778
MPN:
BD137G
Series: BD
onsemi
BD137G onsemi Bipolar Transistors
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Key Specification:
Assembly THT
Enclosure TO-225AA
Version NPN
Saturation voltage 500 mV
Collector current 1.5 A
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Unit Price (€ / pc.)
0.4522 € *
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0.45 € *
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3000 pcs.
0.4522 €
Description
Technical specifications
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Logistics
Compliance
Variations

NPN transistor, BD137G, onsemi

This NPN power bipolar junction transistor is designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Features

  • Halogen free
  • RoHS Compliant
Technical specifications
Version NPN
Enclosure TO-225AA
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 60 V
max.voltage between collector and emitter Vceo 60 V
min. operating temperature -55 °C
Assembly THT
Saturation voltage 500 mV
Power dissipation 12.5 W
Collector current 1.5 A
Max DC amplification 250 mA
Min DC gain 40 mA
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Logistics
Customs tariff number 85412900
Original Packaging Bulk with 500 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 6/8/11
SVHC free Yes