MJD45H11T4G | onsemi
Bipolar junction transistor, PNP, 8 A, 80 V, SMD, TO-252, MJD45H11T4G
Unit Price (€ / pc.)
0.3689 € *
Available: 0 pcs.
Leadtime: On Request **
Transistor, MJD45H11T4G, ON Semiconductor
The MJD45H11T4G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
Features
- Electrically similar to popular D44H/D45H series
- Fast switching speeds
- Complementary pairs simplifies designs
- AEC-Q101 qualified and PPAP capable
Technical specifications
| Ausführung | PNP | |
| Gehäuse | TO-252 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 80 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 80 V | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Nennstrom | 8 A | |
| Sättigungsspannung | 1 V | |
| Transitfrequenz fTmin | 90 MHz | |
| Verlustleistung VA (AC) | 20 W | |
| Kollektorstrom | 8 A | |
| Min Gleichstromverstärkung | 40 mA |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 2.500 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
