MJE13007G | onsemi

Bipolar junction transistor, NPN, 8 A, 400 V, THT, TO-220, MJE13007G

Order No.: 24S4903
EAN: 4099879029591
MPN:
MJE13007G
Series: MJE
onsemi
MJE13007G onsemi Bipolar Transistors
Image may differ
Unit Price (€ / pc.)
1.2257 € *
Available: 37 pcs.
Leadtime: On Request **
Total Price:
1.23 € *
Price list
Quantity
Price per unit*
1 pcs.
1.2257 €
100 pcs.
1.0948 €
*incl. VAT plus shipping costs
**Subject to prior sale

NPN power transistor, MJE13007G, onsemi

The MJE13007G is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.

Technical specifications
Version NPN
Enclosure TO-220
max. operating temperature 150 °C
max.voltage between collector and emitter Vceo 400 V
min. operating temperature -65 °C
Assembly THT
Power dissipation 80 W
Collector current 8 A
Max DC amplification 40 mA
Min DC gain 8 mA
Logistics
Country of origin IN
Customs tariff number 85419000
Original Packaging Bar with 50 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes