TIP107G | onsemi
Bipolar junction transistor, PNP, 8 A, 100 V, THT, TO-220, TIP107G
Unit Price (€ / pc.)
0.5593 € *
Available: 156 pcs.
Leadtime: On Request **
Transistor, TIP107G, ON Semiconductor
The TIP107G is a 8A PNP bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications.
Features
- Complementary device
- Monolithic construction with built-in base-emitter shunt resistors
Technical specifications
| Ausführung | PNP | |
| Gehäuse | TO-220 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 100 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 100 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 8 A | |
| Sättigungsspannung | 2.5 V | |
| Transitfrequenz fTmin | 4 MHz | |
| Verlustleistung VA (AC) | 80 W | |
| Kollektorstrom | 8 A |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 6/8/11 |
| SVHC frei | Yes |
