TIP107G | onsemi
Bipolar junction transistor, PNP, 8 A, 100 V, THT, TO-220, TIP107G
Unit Price (€ / pc.)
0.5593 € *
Available: 156 pcs.
Leadtime: On Request **
Transistor, TIP107G, ON Semiconductor
The TIP107G is a 8A PNP bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications.
Features
- Complementary device
- Monolithic construction with built-in base-emitter shunt resistors
Technical specifications
| Version | PNP | |
| Enclosure | TO-220 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 100 V | |
| max.voltage between collector and emitter Vceo | 100 V | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Rated current | 8 A | |
| Saturation voltage | 2.5 V | |
| Transit frequency fTmin | 4 MHz | |
| Power dissipation | 80 W | |
| Collector current | 8 A |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 50 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 6/8/11 |
| SVHC free | Yes |
