Deutsch DE

TIP111G | onsemi

Bipolar junction transistor, NPN, 2 A, 80 V, THT, TO-220, TIP111G

Order No.: 25S3019
EAN: 4099879029805
MPN:
TIP111G
Series: TIP
onsemi
TIP111G onsemi Bipolar Transistors
Image may differ
Print
Key Specification:
Assembly THT
Enclosure TO-220
Version NPN
Saturation voltage 2.5 V
Collector current 2 A
Show 4 variants
Download Datasheet Technical specifications
Unit Price (€ / pc.)
0.357 € *
Available: 8 pcs.
Leadtime: On Request **
Total Price:
0.36 € *
*incl. VAT plus shipping costs
**Subject to prior sale
1 pcs.
0.357 €
Description
Technical specifications
Download
Logistics
Compliance
Variations

Transistor, TIP111G, ON Semiconductor

Designed for general−purpose amplifier and low−speed switching applications.

Features

  • Monolithic construction
Technical specifications
Version NPN
Enclosure TO-220
max. operating temperature 150 °C
max.voltage between collector and base Vcbo 80 V
max.voltage between collector and emitter Vceo 80 V
min. operating temperature -65 °C
Assembly THT
Rated current 2 A
Saturation voltage 2.5 V
Transit frequency fTmin 4 MHz
Power dissipation 50 W
Collector current 2 A
Min DC gain 500 mA
Show similar products 0
Logistics
Customs tariff number 85412900
Original Packaging Bar with 50 pieces
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free No
Substance description Lead