FDB0190N807L | onsemi
Onsemi N channel power trench MOSFET, 80 V, 270 A, D2PAK-7L, FDB0190N807L
Unit Price (€ / pc.)
3.7723 € *
Available: 85 pcs.
Leadtime: On Request **
N-Channel MOSFET, FDB0190N807L, ON Semiconductor
Features
- Max RDSon = 1,7 mOhm @ VHGS= 10V, ID= 34A
- Fast Switching; Low Gate Charge,
- High Power and Current Handling Capability
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 1.7 mΩ | |
Gate Charge Qg @10V (nC) | 1.78x10<sup>-7</sup> C | |
Gehäuse | D2PAK-7L | |
max. Spannung | 80 V | |
max. Strom | 270 A | |
max. Temperatur | 175 °C | |
min. Temperatur | -55 °C | |
Montage | SMD | |
Verlustleistung W (DC) | 250 W |
Download
Logistics
Ursprungsland | CN |
Zolltarifnummer | 85412900 |
MSL | MSL 3 |
Originalverpackung | Rolle mit 800 Stück |
Compliance
RoHS konform | Yes |
SVHC frei | Yes |