FDB0190N807L | onsemi

Name: Onsemi N channel power trench MOSFET, 80 V, 270 A, D2PAK-7L, FDB0190N807L
Brand: onsemi
SKU: 54S1023
Price: 3.77 EUR
Availability: InStock

Onsemi N channel power trench MOSFET, 80 V, 270 A, D2PAK-7L, FDB0190N807L

Order No.: 54S1023

EAN: 4099879034809

MPN:

FDB0190N807L

Series: FDB019

Image may differ

Key Specification:

Version N channel

max. Voltage 80 V

Max. current 270 A

drain-source on resistance RDS (on) max @VGS=10V 1.7 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

3.7723 € *

Available: 85 pcs.

Leadtime: On Request **

Total Price:

3.77 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

N-Channel MOSFET, FDB0190N807L, ON Semiconductor

Features

Max RDSon = 1,7 mOhm @ VHGS= 10V, ID= 34A
Fast Switching; Low Gate Charge,
High Power and Current Handling Capability

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	1.7 mΩ
	Gate Charge Qg @10V (nC)	1.78x10<sup>-7</sup> C
	Enclosure	D2PAK-7L
	max. Voltage	80 V
	Max. current	270 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	250 W