FDMS004N08C | onsemi
Onsemi N channel shielded gate trench MOSFET, 80 V, 126 A, SO-8-FL/Power56, FDMS004N08C
Unit Price (€ / pc.)
1.8445 € *
Available: 0 pcs.
Leadtime: On Request **
N-Channel MOSFET, FDMS004N08C, ON Semiconductor
Features
- Shielded Gate MOSFET Technology
- MAX RDSon = 4.0 mOhm @ VGS=10V, ID=44A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lower Switching Noise/EMI
- MSL 1 Robust Package Design
- 100% UIL tested
- RoHS Complient
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 4 mΩ | |
Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
Gehäuse | SO-8-FL/Power56 | |
max. Spannung | 80 V | |
max. Strom | 126 A | |
max. Temperatur | 150 °C | |
min. Temperatur | -55 °C | |
Montage | SMD | |
Verlustleistung W (DC) | 125 W |
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Logistics
Ursprungsland | PH |
Zolltarifnummer | 85412900 |
MSL | MSL 3 |
Originalverpackung | Rolle mit 3.000 Stück |
Compliance
RoHS konform | Yes |
SVHC frei | Yes |