FDMS004N08C | onsemi
Onsemi N channel shielded gate trench MOSFET, 80 V, 126 A, SO-8-FL/Power56, FDMS004N08C
Unit Price (€ / pc.)
1.8445 € *
Available: 0 pcs.
Leadtime: On Request **
N-Channel MOSFET, FDMS004N08C, ON Semiconductor
Features
- Shielded Gate MOSFET Technology
- MAX RDSon = 4.0 mOhm @ VGS=10V, ID=44A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lower Switching Noise/EMI
- MSL 1 Robust Package Design
- 100% UIL tested
- RoHS Complient
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 4 mΩ | |
Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
Enclosure | SO-8-FL/Power56 | |
max. Voltage | 80 V | |
Max. current | 126 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Power loss | 125 W |
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Logistics
Country of origin | PH |
Customs tariff number | 85412900 |
MSL | MSL 3 |
Original Packaging | Reel with 3,000 pieces |
Compliance
RoHS conform | Yes |
SVHC free | Yes |