FDMT1D3N08B | onsemi
Onsemi N channel dual cool power trench MOSFET, 80 V, 164 A, DualCool88, FDMT1D3N08B
Unit Price (€ / pc.)
4.5815 € *
Available: 0 pcs.
Leadtime: On Request **
Power trench , FDMT1D3N08B, onsemi
The FDMT1D3N08B is produced using an advanced PowerTrench process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely ow Junction-to-Ambient thermal resistance.
Features
- Advanced package and silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology
- Engineered for soft recovery
- RoHS compliant
Applications
- Oring FET / Load awitch
- Synchronous rectification
- DC-DC Conversion
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 1.35 mΩ | |
| Gate Charge Qg @10V (nC) | 1.86x10<sup>-7</sup> C | |
| Gehäuse | DualCool88 | |
| max. Spannung | 80 V | |
| max. Strom | 164 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD |
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Logistics
| Zolltarifnummer | 85412900 |
| MSL | MSL 3 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| SVHC frei | Yes |
