1N5820 | onsemi
Schottky rectifier diode, 20 V (RRM), 3 A, DO-201AD, 1N5820
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Unit Price (€ / pc.)
0.2404 € *
Available: 1,196 pcs.
Leadtime: On Request **
Schottky diode, 1N5820, onsemi
This axial lead rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as a rectifier in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
- Extremely low forward voltage
- Lower power losses, high efficiency
- Low stored charge, majority carrier conduction
Technical specifications
| Anzahl der Dioden | 1 | |
| Ausführung | Schottky-Gleichrichterdiode | |
| Durchlassstrom | 3 A | |
| Gehäuse | DO-201AD | |
| max. Temperatur | 125 °C | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Spannung V RRM (Spitzensperrspannung) | 20 V | |
| Sperrschichttemperatur (max.) | 125 °C | |
| Sperrschichttemperatur (min.) | -65 °C | |
| Stoßspitzensperrspannung V RMS | 20 V |
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Logistics
| Ursprungsland | QU |
| Zolltarifnummer | 85411000 |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
