1N5822 | onsemi
Schottky rectifier diode, 40 V (RRM), 3 A, DO-201AD, 1N5822
Abgekündigt
Unit Price (€ / pc.)
0.3094 € *
Available: 150 pcs.
Available in 5 Days: 8,150 pcs.
Leadtime: 22 Weeks **
Total Price:
3.09 € *
Price list
Quantity
Price per unit*
10 pcs.
0.3094 €
50 pcs.
0.2297 €
250 pcs.
0.1880 €
1000 pcs.
0.1607 €
2500 pcs.
0.1416 €
*incl. VAT plus shipping costs
**Subject to prior sale
Schottky diode, 1N5822, onsemi
This axial lead rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as a rectifier in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
- Extremely low forward voltage
- Lower power losses, high efficiency
- Low stored charge, majority carrier conduction
Technical specifications
| Number of diodes | 1 | |
| Version | Schottky-Gleichrichterdiode | |
| Forward Current | 3 A | |
| Enclosure | DO-201AD | |
| max. operating temperature | 125 °C | |
| min. operating temperature | -65 °C | |
| Assembly | THT | |
| Voltage V RRM (peak reverse voltage) | 40 V | |
| Junction temperature (max.) | 125 °C | |
| Junction temperature (min.) | -65 °C | |
| Surge blocking voltage V RMS | 48 V |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85411000 |
| Original Packaging | Ammopack mit 1.700 Stück |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
