BD681 | STMicroelectronics
Bipolar junction transistor, NPN, 4 A, 100 V, THT, TO-126, BD681
Unit Price (€ / pc.)
0.7616 € *
Available: 239 pcs.
Available in 5 Days: 7,650 pcs.
Leadtime: 50 Weeks **
Total Price:
0.76 € *
Price list
Quantity
Price per unit*
1 pcs.
0.7616 €
10 pcs.
0.4760 €
50 pcs.
0.3808 €
250 pcs.
0.3213 €
1000 pcs.
0.2904 €
*incl. VAT plus shipping costs
**Subject to prior sale
Complementary transistor, BD681, STMicroelectronics
This product is suitable for linear and switching industrial equipment.
Features
- Good linearity
- High frequency
- Monolithic darlington configuration with integrated antiparallel collector-emitter diode
Technical specifications
| Ausführung | NPN | |
| Gehäuse | TO-126 | |
| max. Temperatur | 150 °C | |
| max.Spannung zwischen Kollektor und Basis Vcbo | 100 V | |
| max.Spannung zwischen Kollektor und Emitter Vceo | 100 V | |
| min. Temperatur | -65 °C | |
| Montage | THT | |
| Nennstrom | 4 A | |
| Transitfrequenz fTmin | 1 MHz | |
| Verlustleistung VA (AC) | 40 W | |
| Kollektorstrom | 4 A | |
| Min Gleichstromverstärkung | 750 mA |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
