STP3N150 | STMicroelectronics
STMicroelectronics N channel PowerMESH MOSFET, 1500 V, 2.5 A, TO-220, STP3N150
Unit Price (€ / pc.)
7.1519 € *
Available: 2,854 pcs.
Leadtime: On Request **
Total Price:
7.15 € *
Price list
Quantity
Price per unit*
1 pcs.
7.1519 €
10 pcs.
6.2951 €
100 pcs.
5.5216 €
200 pcs.
5.2955 €
1000 pcs.
4.8790 €
*incl. VAT plus shipping costs
**Subject to prior sale
Power MOSFET, STP3N150, STMicroelectronics
The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Features
- 100% Avalanche tested
- High speed switching
- Creepage distance path is 5.4 mm
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 9 Ω | |
Gate Charge Qg @10V (nC) | 1x10<sup>-8</sup> C | |
Enclosure | TO-220 | |
max. Voltage | 1500 V | |
Max. current | 2.5 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Power loss | 63 W |
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Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
MSL | MSL 1 |
Original Packaging | Bar with 50 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |