STP3N150 | STMicroelectronics
STMicroelectronics N channel PowerMESH MOSFET, 1500 V, 2.5 A, TO-220, STP3N150
Unit Price (€ / pc.)
7.1519 € *
Available: 2,854 pcs.
Leadtime: On Request **
Total Price:
7.15 € *
Price list
Quantity
Price per unit*
1 pcs.
7.1519 €
10 pcs.
6.2951 €
100 pcs.
5.5216 €
200 pcs.
5.2955 €
1000 pcs.
4.8790 €
*incl. VAT plus shipping costs
**Subject to prior sale
Power MOSFET, STP3N150, STMicroelectronics
The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Features
- 100% Avalanche tested
- High speed switching
- Creepage distance path is 5.4 mm
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 9 Ω | |
| Gate Charge Qg @10V (nC) | 1x10<sup>-8</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 1500 V | |
| max. Strom | 2.5 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 63 W |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| MSL | MSL 1 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
