STP3NK80Z | STMicroelectronics
STMicroelectronics N channel SuperMESH power MOSFET, 800 V, 2.5 A, TO-220, STP3NK80Z
Unit Price (€ / pc.)
0.6188 € *
Available: 10 pcs.
Leadtime: On Request **
Power MOSFET, STP3NK80Z, STMicroelectronics
The STP3NK80Z is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
Features
- Extremely high dv/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 4.5 Ω | |
| Gate Charge Qg @10V (nC) | 1x10<sup>-8</sup> C | |
| Enclosure | TO-220 | |
| max. Voltage | 800 V | |
| Max. current | 2.5 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 70 W |
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Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Bar with 50 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
