TK100E06N1,S1X(S | Toshiba
Toshiba N channel MOSFET, 60 V, 100 A, TO-220, TK100E06N1,S1X(S
Unit Price (€ / pc.)
1.8445 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, TK100E06N1,S1X(S, Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Features
- Low drain-source on-resistance
- Low leakage current
Applications
- Switching voltage regulators
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 2.3 mΩ | |
Gate Charge Qg @10V (nC) | 1.4x10<sup>-7</sup> C | |
Gehäuse | TO-220 | |
max. Spannung | 60 V | |
max. Strom | 100 A | |
max. Temperatur | 150 °C | |
min. Temperatur | -55 °C | |
Montage | THT | |
Verlustleistung W (DC) | 255 W |
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Logistics
Zolltarifnummer | 85412900 |
MSL | MSL 1 |
Originalverpackung | Bulk mit 50 Stück |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |