TK65S04N1L,LQ(O | Toshiba
Toshiba N channel MOSFET, 40 V, 65 A, DPAK, TK65S04N1L,LQ(O
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MOSFET, TK65S04N1L,LQ(O, Toshiba
MOSFETs Silicon N-channel MOS (U-MOS -H)
Features
- Low drain-source on-resistance
- Low leakage current
Applications
- Switching voltage regulators
- Automotive
- Motor drivers
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 4.3 mΩ | |
Gate Charge Qg @10V (nC) | 3.9x10<sup>-8</sup> C | |
Enclosure | DPAK | |
max. Voltage | 40 V | |
Max. current | 65 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD |
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Logistics
Customs tariff number | 85412900 |
MSL | MSL 1 |
Original Packaging | Bulk with 2,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |