SI2333DDS-T1-GE3 | Vishay

Name: Vishay P-channel MOSFET, -12 V, -6 A, TO-236, SI2333DDS-T1-GE3
Brand: Vishay
SKU: 34S1095
Price: 0.21 EUR
Availability: OutOfStock

Vishay P-channel MOSFET, -12 V, -6 A, TO-236, SI2333DDS-T1-GE3

Order No.: 34S1095

EAN: 4099879034649

MPN:

SI2333DDS-T1-GE3

Series: SI23

Image may differ

Key Specification:

Version P-channel

max. Voltage -12 V

Max. current -6 A

drain-source on resistance RDS (on) max @VGS=10V 28 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.2142 € *

Available: 0 pcs.

Leadtime: 8 Weeks **

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Total Price:

0.21 € *

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Description

MOSFET, SI2333DDS-T1-GE3, Vishay

SMD MOSFET PFET, -12 V, -6 A, 28 mΩ, 150 °C, TO-236, SI2333DDS-T1-GE3.

Applications

Load switch
Battery switch

Technical specifications

	Version	P-channel
	drain-source on resistance RDS (on) max @VGS=10V	28 mΩ
	Gate Charge Qg @10V (nC)	3.5x10<sup>-8</sup> C
	Enclosure	TO-236
	max. Voltage	-12 V
	Max. current	-6 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	1.7 W