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SIJ438DP-T1-GE3 | Vishay

Vishay N channel TrenchFET power MOSFET, 40 V, 80 A, PowerPAK SO-8L, SIJ438DP-T1-GE3

Order No.: 54S1027
EAN: 4099879034830
MPN:
SIJ438DP-T1-GE3
Series: SIJ438
Vishay
SIJ438DP-T1-GE3 Vishay MOSFETs
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Key Specification:
Version N channel
max. Voltage 40 V
Max. current 80 A
drain-source on resistance RDS (on) max @VGS=4,5V 1.75 mΩ
drain-source on resistance RDS (on) max @VGS=10V 1.35 mΩ
Download Datasheet Technical specifications
Unit Price (€ / pc.)
1.1543 € *
Available: 1,176 pcs.
Leadtime: 30 Weeks **
Total Price:
1.15 € *
*incl. VAT plus shipping costs
**Subject to prior sale
1 pcs.
1.1543 €
Description
Technical specifications
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Logistics
Compliance

N-Channel MOSFET, SIJ438DP-T1-GE3, Vishay

Features

  • Tuned for the lowest RDS-Qoss FOM
  • 100 % Rg and UIS tested
  • Qgd / Qgs ratio < 1 optimizes switching characteristics
Technical specifications
Version N channel
drain-source on resistance RDS (on) max @VGS=10V 1.35 mΩ
drain-source on resistance RDS (on) max @VGS=4,5V 1.75 mΩ
Gate Charge Qg @10V (nC) 1.21x10<sup>-7</sup> C
Enclosure PowerPAK SO-8L
max. Voltage 40 V
Max. current 80 A
max. operating temperature 150 °C
min. operating temperature -55 °C
Assembly SMD
Power loss 69.4 W
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Logistics
Country of origin CN
Customs tariff number 85412900
MSL MSL 3
Original Packaging Reel with 3,000 pieces
Compliance
RoHS conform Yes
SVHC free Yes