SIR640ADP-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 40 V, 41.6 A, SOIC-8, SIR640ADP-T1-GE3
Brand: Vishay
SKU: 24S8236
Price: 0.02 EUR
Availability: OutOfStock

Vishay N channel TrenchFET power MOSFET, 40 V, 41.6 A, SOIC-8, SIR640ADP-T1-GE3

Order No.: 24S8236

EAN: 4099879033741

MPN:

SIR640ADP-T1-GE3

Series: SIR640

Image may differ

Key Specification:

Version N-Kanal

max. Voltage 40 V

Max. current 41.6 A

drain-source on resistance RDS (on) max @VGS=10V 2 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.0226 € *

Available: 0 pcs.

Leadtime: On Request **

Total Price:

135.66 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiR640ADP, 40 V, 2.0 mohm, 60 A, 28.5 nC, PowerPAK SO-8

Technical specifications

	Version	N-Kanal
	drain-source on resistance RDS (on) max @VGS=10V	2 mΩ
	Gate Charge Qg @10V (nC)	9x10<sup>-8</sup> C
	Enclosure	SOIC-8
	max. Voltage	40 V
	Max. current	41.6 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD