SIR826ADP-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 80 V, 60 A, SOIC-8, SIR826ADP-T1-GE3
Brand: Vishay
SKU: 24S8210
Price: 2.28 EUR
Availability: InStock

Vishay N channel TrenchFET power MOSFET, 80 V, 60 A, SOIC-8, SIR826ADP-T1-GE3

Order No.: 24S8210

EAN: 4099879033666

MPN:

SIR826ADP-T1-GE3

Series: SI

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 80 V

max. Strom 60 A

Einschaltwiderstand RDS (on) max @VGS=10V 5.5 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

2.2848 € *

Available: 3,000 pcs.

Leadtime: 69 Weeks **

Total Price:

2.28 € *

Price list

Quantity

Price per unit*

1 pcs.

2.2848 €

25 pcs.

1.9516 €

100 pcs.

1.7850 €

250 pcs.

1.7017 €

1000 pcs.

1.5589 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiR826ADP, 80 V, 5.5 mohm, 60 A, 25 nC, PowerPAK SO-8

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	5.5 mΩ
	Gate Charge Qg @10V (nC)	2.5x10<sup>-8</sup> C
	Gehäuse	SOIC-8
	max. Spannung	80 V
	max. Strom	60 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	104 W