SIR870ADP-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 100 V, 60 A, SOIC-8, SIR870ADP-T1-GE3
Brand: Vishay
SKU: 24S8214
Price: 1.79 EUR
Availability: OutOfStock

Vishay N channel TrenchFET power MOSFET, 100 V, 60 A, SOIC-8, SIR870ADP-T1-GE3

Order No.: 24S8214

EAN: 4099879033673

MPN:

SIR870ADP-T1-GE3

Series: SI

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 100 V

max. Strom 60 A

Einschaltwiderstand RDS (on) max @VGS=10V 6.3 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.7850 € *

Available: 0 pcs.

Leadtime: 30 Weeks **

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Total Price:

1.79 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiR870ADP, 100 V, 6.6 mohm, 60 A, 25.5 nC, PowerPAK SO-8

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	6.3 mΩ
	Gate Charge Qg @10V (nC)	8x10<sup>-8</sup> C
	Gehäuse	SOIC-8
	max. Spannung	100 V
	max. Strom	60 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	104 W