SIS488DN-T1-GE3 | Vishay
Vishay N channel TrenchFET power MOSFET, 40 V, 40 A, PowerPAK 1212-8, SIS488DN-T1-GE3
Unit Price (€ / pc.)
1.3804 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
1.38 € *
Price list
Quantity
Price per unit*
1 pcs.
1.3804 €
10 pcs.
1.2852 €
50 pcs.
1.1305 €
250 pcs.
0.9758 €
1000 pcs.
0.8568 €
2500 pcs.
0.7854 €
*incl. VAT plus shipping costs
**Subject to prior sale
N-channel MOSFETs, type Vishay Siliconix Si.
Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiS488DN, 40 V, 5.5 mohm, 40 A, 9.8 nC, PowerPAK 1212-8
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 5.5 mΩ | |
Gate Charge Qg @10V (nC) | 3.2x10<sup>-8</sup> C | |
Gehäuse | PowerPAK 1212-8 | |
max. Spannung | 40 V | |
max. Strom | 40 A | |
max. Temperatur | 150 °C | |
min. Temperatur | -55 °C | |
Montage | SMD |
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Logistics
Ursprungsland | TW |
Zolltarifnummer | 85412900 |
MSL | MSL 1 |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |