SIS862DN-T1-GE3 | Vishay

Name: Vishay N channel TrenchFET power MOSFET, 60 V, 40 A, PowerPAK 1212-8, SIS862DN-T1-GE3
Brand: Vishay
SKU: 24S8242
Price: 0.84 EUR
Availability: OutOfStock

Vishay N channel TrenchFET power MOSFET, 60 V, 40 A, PowerPAK 1212-8, SIS862DN-T1-GE3

Order No.: 24S8242

EAN: 4099879033765

MPN:

SIS862DN-T1-GE3

Series: SI

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 60 V

max. Strom 40 A

Einschaltwiderstand RDS (on) max @VGS=10V 8.5 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.8449 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.84 € *

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Description

N-channel MOSFETs, type Vishay Siliconix Si.

Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiS862DN, 60 V, 8.5 mohm, 40 A, 8.7 nC, PowerPAK 1212-8

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	8.5 mΩ
	Gate Charge Qg @10V (nC)	3.2x10<sup>-8</sup> C
	Gehäuse	PowerPAK 1212-8
	max. Spannung	60 V
	max. Strom	40 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	52 W