SISA18ADN-T1-GE3 | Vishay
Vishay N channel TrenchFET power MOSFET, 30 V, 38.3 A, PowerPAK 1212-8, SISA18ADN-T1-GE3
Unit Price (€ / pc.)
0.357 € *
Available: 0 pcs.
Leadtime: On Request **
N-channel MOSFETs, type Vishay Siliconix Si.
Technical attributes (type, voltage (VDS), resistance (RDSON), current ID (TC = 25°C), gate charge Qg, package): SiSA18ADN, 30 V, 7.5 mohm, 38.3 A, 6.9 nC, PowerPAK 1212-8
Technical specifications
Version | N-Kanal | |
drain-source on resistance RDS (on) max @VGS=10V | 7.5 mΩ | |
Gate Charge Qg @10V (nC) | 2.15x10<sup>-8</sup> C | |
Enclosure | PowerPAK 1212-8 | |
max. Voltage | 30 V | |
Max. current | 38.3 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD |
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Logistics
Country of origin | TW |
Customs tariff number | 85412900 |
MSL | MSL 1 |
Original Packaging | Rolle mit 3.000 Stück |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |