BFP740ESDH6327XTSA1 | Infineon Technologies
Bipolar junction transistor, NPN, 45 mA, 4.2 V, SMD, SOT-343, BFP740ESDH6327XTSA1
Unit Price (€ / pc.)
0.3689 € *
Available: 0 pcs.
Leadtime: 4 Weeks **
Bipolar transistor, BFP740ESDH6327XTSA1, Infineon Technologies
The BFP740ESDH6327XTSA1 is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.
Features
- Unique combination of high end RF performance and robustness
- High gain
- Integrated protection circuit
Applications
- Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB
- Wireless communications: WLAN, WiMax and UWB
- Multimedia applications such as portable TV, CATV and FM radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Technical specifications
| Version | NPN | |
| Enclosure | SOT-343 | |
| max. operating temperature | 150 °C | |
| max.voltage between collector and base Vcbo | 4.9 V | |
| max.voltage between collector and emitter Vceo | 4.2 V | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Transit frequency fTmin | 45 GHz | |
| Power dissipation | 0.16 W | |
| Collector current | 45 mA | |
| Max DC amplification | 400 mA | |
| Min DC gain | 160 mA |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 3,000 pieces |
