BDW83D | COMSET Semiconductors
Bipolar junction transistor, NPN, 15 A, 120 V, THT, TO-3PN, BDW83D
Order No.: 15S5368
EAN: 4099879028563
MPN:
BDW83D
Unit Price (€ / pc.)
5.2241 € *
Available: 185 pcs.
Leadtime: On Request **
Total Price:
5.22 € *
Price list
Quantity
Price per unit*
1 pcs.
5.2241 €
10 pcs.
3.7366 €
100 pcs.
3.2011 €
500 pcs.
2.7727 €
1000 pcs.
2.5228 €
*incl. VAT plus shipping costs
**Subject to prior sale
NPN power transistor, BDW83D, COMSET
This silicon epitaxial-base NPN power monolithic Darlington transistor is mounted in Jedec TO3PN plastic package. It is intended for use in power linear and switching applications.
Features
- Compliance to RoHS
Technical specifications
Version | NPN | |
Enclosure | TO-3PN | |
max. operating temperature | 150 °C | |
max.voltage between collector and base Vcbo | 120 V | |
max.voltage between collector and emitter Vceo | 120 V | |
min. operating temperature | -65 °C | |
Assembly | THT | |
Rated current | 15 A | |
Saturation voltage | 2.5 V | |
Transit frequency fTmin | 1 MHz | |
Power dissipation | 150 W | |
Collector current | 15 A |
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Logistics
Country of origin | CN |
Customs tariff number | 85412900 |
Original Packaging | Bar with 25 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |